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Surface morphology and photoluminescence of InGaAs quantum rings grown by droplet epitaxy with varying In0.5Ga0.5 droplet amount

Identifieur interne : 002441 ( Main/Repository ); précédent : 002440; suivant : 002442

Surface morphology and photoluminescence of InGaAs quantum rings grown by droplet epitaxy with varying In0.5Ga0.5 droplet amount

Auteurs : RBID : Pascal:11-0330581

Descripteurs français

Pascal (Inist)
- Morphologie surface, Photoluminescence, Anneau quantique, Epitaxie gouttelette, Gouttelette, Propriété physique, Propriété optique, Faisceau moléculaire, Perfection cristalline, Nanocristal, Nanomatériau, Couche monomoléculaire, Cristallisation, Intensité excitation, Arséniure d'indium, Arséniure de gallium, Anisotropie, Nanostructure, Microscopie force atomique, Puits quantique, Epitaxie jet moléculaire, Semiconducteur III-V, InGaAs, 6855J, 7867, 7855, 7866.

English descriptors

KwdEn :
- Anisotropy, Atomic force microscopy, Crystal perfection, Crystallization, Droplet epitaxy, Droplets, Excitation intensity, Gallium arsenides, III-V semiconductors, Indium arsenides, Molecular beam epitaxy, Molecular beams, Monolayers, Nanocrystal, Nanostructured materials, Nanostructures, Optical properties, Photoluminescence, Physical properties, Quantum ring, Quantum wells, Surface morphology.

Abstract

We have presented the study result of physical and optical properties of the InGaAs quantum ring (QR) structures grown by droplet epitaxy using molecular beam epixaty. The structural properties and quality of QRs strongly depended on In_0.5Ga_0.5 droplet amount. The photoluminescence (PL) results confirmed the crystal quality of the nanocrystal of the capped samples with the optimum In_0.5Ga_0.5 droplet amount. The optimum In_0.5Ca_0.5 amount is 3 and 4 ML (monolayer) under the droplet forming condition of 210 °C substrate and crystallization at 180 °C. The PL measuring parameters, including excitation intensity and polarization, have been varied. The polarized PL spectra indicated anisotropy in the QR structures.

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Pascal:11-0330581

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Surface morphology and photoluminescence of InGaAs quantum rings grown by droplet epitaxy with varying In<sub>0.5</sub>
Ga<sub>0.5</sub>
 droplet amount</title>
<author><name sortKey="Pankaow, Naraporn" uniqKey="Pankaow N">Naraporn Pankaow</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Semiconductor Device Research Laboratory (NanoTec Center of Excellence), Department of Electrical Engineering, Chulalongkorn University</s1>
<s2>Bangkok 10330</s2>
<s3>THA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Thaïlande</country>
<wicri:noRegion>Bangkok 10330</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Thainoi, Supachok" uniqKey="Thainoi S">Supachok Thainoi</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Semiconductor Device Research Laboratory (NanoTec Center of Excellence), Department of Electrical Engineering, Chulalongkorn University</s1>
<s2>Bangkok 10330</s2>
<s3>THA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Thaïlande</country>
<wicri:noRegion>Bangkok 10330</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Panyakeow, Somsak" uniqKey="Panyakeow S">Somsak Panyakeow</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Semiconductor Device Research Laboratory (NanoTec Center of Excellence), Department of Electrical Engineering, Chulalongkorn University</s1>
<s2>Bangkok 10330</s2>
<s3>THA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Thaïlande</country>
<wicri:noRegion>Bangkok 10330</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Ratanathammaphan, Somchai" uniqKey="Ratanathammaphan S">Somchai Ratanathammaphan</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Semiconductor Device Research Laboratory (NanoTec Center of Excellence), Department of Electrical Engineering, Chulalongkorn University</s1>
<s2>Bangkok 10330</s2>
<s3>THA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<country>Thaïlande</country>
<wicri:noRegion>Bangkok 10330</wicri:noRegion>
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<publicationStmt><idno type="inist">11-0330581</idno>
<date when="2011">2011</date>
<idno type="stanalyst">PASCAL 11-0330581 INIST</idno>
<idno type="RBID">Pascal:11-0330581</idno>
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<seriesStmt><idno type="ISSN">0022-0248</idno>
<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Anisotropy</term>
<term>Atomic force microscopy</term>
<term>Crystal perfection</term>
<term>Crystallization</term>
<term>Droplet epitaxy</term>
<term>Droplets</term>
<term>Excitation intensity</term>
<term>Gallium arsenides</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>Molecular beam epitaxy</term>
<term>Molecular beams</term>
<term>Monolayers</term>
<term>Nanocrystal</term>
<term>Nanostructured materials</term>
<term>Nanostructures</term>
<term>Optical properties</term>
<term>Photoluminescence</term>
<term>Physical properties</term>
<term>Quantum ring</term>
<term>Quantum wells</term>
<term>Surface morphology</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Morphologie surface</term>
<term>Photoluminescence</term>
<term>Anneau quantique</term>
<term>Epitaxie gouttelette</term>
<term>Gouttelette</term>
<term>Propriété physique</term>
<term>Propriété optique</term>
<term>Faisceau moléculaire</term>
<term>Perfection cristalline</term>
<term>Nanocristal</term>
<term>Nanomatériau</term>
<term>Couche monomoléculaire</term>
<term>Cristallisation</term>
<term>Intensité excitation</term>
<term>Arséniure d'indium</term>
<term>Arséniure de gallium</term>
<term>Anisotropie</term>
<term>Nanostructure</term>
<term>Microscopie force atomique</term>
<term>Puits quantique</term>
<term>Epitaxie jet moléculaire</term>
<term>Semiconducteur III-V</term>
<term>InGaAs</term>
<term>6855J</term>
<term>7867</term>
<term>7855</term>
<term>7866</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">We have presented the study result of physical and optical properties of the InGaAs quantum ring (QR) structures grown by droplet epitaxy using molecular beam epixaty. The structural properties and quality of QRs strongly depended on In<sub>0.5</sub>
Ga<sub>0.5</sub>
 droplet amount. The photoluminescence (PL) results confirmed the crystal quality of the nanocrystal of the capped samples with the optimum In<sub>0.5</sub>
Ga<sub>0.5</sub>
 droplet amount. The optimum In<sub>0.5</sub>
Ca<sub>0.5</sub>
 amount is 3 and 4 ML (monolayer) under the droplet forming condition of 210 °C substrate and crystallization at 180 °C. The PL measuring parameters, including excitation intensity and polarization, have been varied. The polarized PL spectra indicated anisotropy in the QR structures.</div>
</front>
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<fA06><s2>1</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Surface morphology and photoluminescence of InGaAs quantum rings grown by droplet epitaxy with varying In<sub>0.5</sub>
Ga<sub>0.5</sub>
 droplet amount</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the 16th International Conference on Molecular Beam Epitaxy (MBE 2010), Berlin, Germany, 22-27 August, 2010</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>PANKAOW (Naraporn)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>THAINOI (Supachok)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>PANYAKEOW (Somsak)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>RATANATHAMMAPHAN (Somchai)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>GEELHAAR (Lutz)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>HEYN (Christian)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="03" i2="1"><s1>WIECK (Andreas D.)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Semiconductor Device Research Laboratory (NanoTec Center of Excellence), Department of Electrical Engineering, Chulalongkorn University</s1>
<s2>Bangkok 10330</s2>
<s3>THA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA15 i1="01"><s1>Paul-Drude-Institut für Festkörperelektronik</s1>
<s2>Berlin</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
</fA15>
<fA15 i1="02"><s1>University of Hambourg</s1>
<s3>DEU</s3>
<sZ>2 aut.</sZ>
</fA15>
<fA15 i1="03"><s1>University of Bochum</s1>
<s3>DEU</s3>
<sZ>3 aut.</sZ>
</fA15>
<fA20><s1>282-285</s1>
</fA20>
<fA21><s1>2011</s1>
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<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>13507</s2>
<s5>354000190370280700</s5>
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<s1>© 2011 INIST-CNRS. All rights reserved.</s1>
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<s2>C</s2>
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<fA61><s0>A</s0>
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</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>We have presented the study result of physical and optical properties of the InGaAs quantum ring (QR) structures grown by droplet epitaxy using molecular beam epixaty. The structural properties and quality of QRs strongly depended on In<sub>0.5</sub>
Ga<sub>0.5</sub>
 droplet amount. The photoluminescence (PL) results confirmed the crystal quality of the nanocrystal of the capped samples with the optimum In<sub>0.5</sub>
Ga<sub>0.5</sub>
 droplet amount. The optimum In<sub>0.5</sub>
Ca<sub>0.5</sub>
 amount is 3 and 4 ML (monolayer) under the droplet forming condition of 210 °C substrate and crystallization at 180 °C. The PL measuring parameters, including excitation intensity and polarization, have been varied. The polarized PL spectra indicated anisotropy in the QR structures.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B60H55J</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70H67</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B70H55</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B70H66</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Morphologie surface</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Surface morphology</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Photoluminescence</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Photoluminescence</s0>
<s5>02</s5>
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<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Quantum ring</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Anillo cuántico</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Epitaxie gouttelette</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Droplet epitaxy</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Epitaxia gotita</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Gouttelette</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Droplets</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Propriété physique</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Physical properties</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Propriété optique</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Optical properties</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Faisceau moléculaire</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Molecular beams</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Perfection cristalline</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Crystal perfection</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Perfección cristalina</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Nanocristal</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Nanocrystal</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Nanocristal</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Nanomatériau</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Nanostructured materials</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Couche monomoléculaire</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Monolayers</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Cristallisation</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Crystallization</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Intensité excitation</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Excitation intensity</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Intensidad excitación</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Arséniure d'indium</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Arséniure de gallium</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Anisotropie</s0>
<s5>29</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Anisotropy</s0>
<s5>29</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Nanostructure</s0>
<s5>30</s5>
</fC03>
<fC03 i1="18" i2="3" l="ENG"><s0>Nanostructures</s0>
<s5>30</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Microscopie force atomique</s0>
<s5>31</s5>
</fC03>
<fC03 i1="19" i2="3" l="ENG"><s0>Atomic force microscopy</s0>
<s5>31</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>Puits quantique</s0>
<s5>32</s5>
</fC03>
<fC03 i1="20" i2="3" l="ENG"><s0>Quantum wells</s0>
<s5>32</s5>
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<s5>33</s5>
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<s5>33</s5>
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<s5>34</s5>
</fC03>
<fC03 i1="22" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>34</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>InGaAs</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>6855J</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="25" i2="3" l="FRE"><s0>7867</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="26" i2="3" l="FRE"><s0>7855</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="27" i2="3" l="FRE"><s0>7866</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>227</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>MBE 2010 International Conference on Molecular Beam Epitaxy</s1>
<s2>16</s2>
<s3>Berlin DEU</s3>
<s4>2010-08-22</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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Surface morphology and photoluminescence of InGaAs quantum rings grown by droplet epitaxy with varying In0.5Ga0.5 droplet amount

Surface morphology and photoluminescence of InGaAs quantum rings grown by droplet epitaxy with varying In0.5Ga0.5 droplet amount

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